Magnetization of Dimensional Diluted Magnetic Semiconductors

¹SLU College of Natural Sciences, Department of Physics, Ethiopia

²SLU College of Natural Sciences, Department of Physical Chemistry, Ethiopia

*Corresponding author: Misgana Taraka Inkosa, SLU College of Natural Sciences, Department of Physics, Ethiopia, Tel: 0920665525, Email: [email protected]

ABSTRACT

The one dimension, two dimension and the three dimension relation in case of concentration and temperature versus reduced magnetization have been over looked. Recently information technology is one of the important issues for the optical, electrical and magnetic properties of diluted magnetic semiconductors. One of the most useful aspects of semiconductors resides in their capacity to be doped with impurities, by which the electrical properties can be tuned be interpreted as a function of temperature and magnon concentration. DMs is of fundamental interest and may enable future spin-optoelectronic devices. In order to enable to them useful for such devices efforts have been made to develop diluted magnetic semiconductors (DMS) in which small quantity of magnetic ion is introduced in to normal semiconductors. ZnMnTe with face centered cubic structure and long-range antiferromagnetic ordering is study within the frame work of the Heisenberg model. The Hamiltonian includes exchange interactions with the nearest neighbors and Zeeman terms.

Keywords: Diluted Magnetic Semiconductors, Low Dimensional, Antiferromagnetic

Received: December 24, 2025
Published: May 22, 2026

Citation: Inkosa MT, Nigusa A. (2026). Magnetization of Dimensional Diluted Magnetic Semiconductors. Nanoparticle. 7(1):22.

Copyright: Inkosa MT and Nigusa A. © (2026).